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[碳化硅性质] Silicon Carbide, SiC Material Properties

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发表于 2011-8-25 23:43 |显示全部帖子
     Silicon Carbide is the only chemical compound of carbon and silicon. It was originally produced by a high temperature electro-chemical reaction of sand and carbon. Silicon carbide is an excellent abrasive and has been produced and made into grinding wheels and other abrasive products for over one hundred years. Today the material has been developed into a high quality technical grade ceramic with very good mechanical properties. It is used in abrasives, refractories, ceramics, and numerous high-performance applications. The material can also be made an electrical conductor and has applications in resistance heating, flame igniters and electronic components. Structural and wear applications are constantly developing.

.Key Silicon Carbide Properties

Low density

High strength

Low thermal expansion

High thermal conductivity

High hardness

High elastic modulus

Excellent thermal shock resistance

Superior chemical inertness

.
Silicon Carbide Typical Uses

Fixed and moving turbine components

Suction box covers

Seals, bearings

Ball valve parts

Hot gas flow liners

Heat exchangers

Semiconductor process equipment

General Silicon Carbide Information     Silicon carbide is composed of tetrahedra of carbon and silicon atoms with strong bonds in the crystal lattice. This produces a very hard and strong material. Silicon carbide is not attacked by any acids or alkalis or molten salts up to 800. In air, SiC forms a protective silicon oxide coating at 1200 and is able to be used up to 1600. The high thermal conductivity coupled with low thermal expansion and high strength give this material exceptional thermal shock resistant qualities. Silicon carbide ceramics with little or no grain boundary impurities maintain their strength to very high temperatures, approaching 1600 with no strength loss. Chemical purity, resistance to chemical attack at temperature, and strength retention at high temperatures has made this material very popular as wafer tray supports and paddles in semiconductor furnaces. The electrical conduction of the material has lead to its use in resistance heating elements for electric furnaces, and as a key component in thermistors (temperature variable resistors) and in varistors (voltage variable resistors).

Download Silicon Carbide datasheet

Silicon Carbide Engineering Properties*

Silicon Carbide Properties

Mechanical

SI/Metric (Imperial)

SI/Metric

(Imperial)

Density

gm/cc (lb/ft3)

3.1

(193.5)

Porosity

% (%)

0

(0)

Color

black

Flexural Strength

MPa (lb/in2x103)

550

(80)

Elastic Modulus

GPa (lb/in2x106)

410

(59.5)

Shear Modulus

GPa (lb/in2x106)

Bulk Modulus

GPa (lb/in2x106)

Poisson’s Ratio

0.14

(0.14)

Compressive Strength

MPa (lb/in2x103)

3900

(566)

Hardness

Kg/mm2

2800

Fracture Toughness KIC

MPa•m1/2

4.6

Maximum Use Temperature
(no load)

癈 (癋)

1650

(3000)

Thermal




Thermal Conductivity

W/m•癒 (BTU•in/ft2•hr•癋)

120

(830)

Coefficient of Thermal Expansion

10–6/癈 (10–6/癋)

4.0

(2.2)

Specific Heat

J/Kg•癒 (Btu/lb•癋)

750

(0.18)

Electrical




Dielectric Strength

ac-kv/mm (volts/mil)

semiconductor

Dielectric Constant

Dissipation Factor

Loss Tangent

Volume Resistivity

ohm•cm

102–106

dopant dependent

*All properties are room temperature values except as noted.
The data presented is typical of commercially available material and is offered for comparative purposes only. The information is not to be interpreted as absolute material properties nor does it constitute a representation or warranty for which we assume legal liability. User shall determine suitability of the material for the intended use and assumes all risk and liability whatsoever in connection therewith.


References:

http://accuratus.com/silicar.html


成功的人不抱怨,抱怨的人不成功,无论是顺境、逆境,

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顶一个

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非常实用

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发表于 2012-2-23 10:08 |显示全部帖子
不错   就是有些乱码

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